Sic Crystal Growth Furnace PVT LPE HT-CVD High Quality Sic Single Crystal Growth Method

Sic crystal growth furnace PVT LPE HT-CVD high quality sic single crystal growth method

Silicon carbide crystal growth furnace is the core equipment to achieve high quality SiC crystal preparation. Among them, PVT method, LPE method and HT-CVD method are three commonly used silicon carbide single crystal growth methods.

By sublimating sic powder at high temperature and recrystallizing it on seed crystal, high purity and high quality SIC single crystal growth can be achieved by PVT method.LPE method uses liquid phase epitaxy technology to grow high quality and high purity silicon carbide crystals on silicon carbide substrate, which can greatly improve the production speed and crystal quality.By HT-CVD method, high purity and low defect silicon carbide crystals are deposited on the seed crystals by pyrolysis of high purity gas at high temperature.

Based on the characteristics of high temperature, high vacuum and precise control of the silicon carbide single crystal growth furnace, we can design customized growth solutions to achieve efficient and stable production of large size and high quality silicon carbide single crystals.

Features:

1. Physical Vapor Transfer (PVT)



● Process: The SiC powder is sublimed in the high temperature region (>2000℃), the SiC gas is transported along the temperature gradient, and the SiC is condensed into crystals in the cooler tail


● key feature:
● key components such as crucible and seed holder are made of high purity graphite.
● The Sic furnace is equipped with thermocouples and infrared sensors.
● Sic crystal furnace uses a vacuum and inert gas flow system.
● The Sic furnace is equipped with an advanced programmable logic controller (PLC) system to achieve automatic control of the growth process.
● In order to ensure long-term stable operation of the SiC furnace, the system integrates cooling and exhaust gas treatment functions.


● Advantages: Low equipment cost, simple structure, is the current mainstream crystal growth method


● Application: Preparation of high quality SiC crystals




2. High temperature Chemical Vapor Precipitation (HTCVD)



● Process: SiH4, C2H4 and other reaction gases are passed through the carrier gas from the bottom of the reactor, react in the central hot zone and form SiC clusters, sublimate to the top of the reactor seed crystal growth, the process temperature is 1800-2300℃


● key feature:
● High temperature vapor deposition method uses the principle of electromagnetic coupling;
● When growing, the growth chamber is heated to 1800℃-2300℃ by induction coil;
● SiH4+C3H8 or SiH4+C2H4 gas is stably fed into the growth chamber, which is carried by He and H2 and transported upward to the seed crystal direction, providing Si source and C source for crystal growth, and realizing SiC crystal growth at the seed crystal;
● The temperature at the seed crystal is lower than the evaporation point of SiC, so that the vapor phase of silicon carbide can condense on the lower surface of the seed crystal to obtain pure silicon carbide ingot.


● Advantages: less defects, high purity, easy doping


● Application: High purity and high quality silicon carbide crystals were prepared





3. Liquid phase method (LPE)



● Process: The carbon silicon solution is co-dissolved at 1800℃, and the SiC crystal is precipitated from the supercooled saturated solution


● key feature:
●High quality epitaxial growth is achieved, and low defect density and high purity SiC single crystal layer are obtained.
●LPE method can optimize the growth rate and crystal quality of epitaxial layer.
●It is easy to achieve large-scale industrial production, and the growth conditions are relatively mild, and the requirements for equipment are low.


● Advantages: Low growth cost, low defect density


● Application:The epitaxial growth of high quality silicon carbide single crystal layer on silicon carbide substrate can manufacture high performance electronic devices

Silicon carbide single crystal growth furnace display: