Sapphire Ky Crystallization Furnace Kyropoulos Foam Process Large Size Crystal Growth Equipment For LED Substrate

Kyropoulos bubble process equipment is widely used in the following fields:

1. LED industry: Used to produce high-quality sapphire substrate to meet the needs of LED chip manufacturing.

2. Infrared military devices: Sapphire is widely used in infrared window materials because of its excellent optical properties.

3. Satellite space technology: Sapphire is used as a key material in satellite technology.

4. Laser window material: Used for high-performance laser window material.

Kyropoulos crystal growth equipment with its high efficiency, low cost and high quality, in the field of sapphire crystal growth occupies an important position, and is widely used in many high-tech fields.

FAQ

1. Q: What are the core advantages of sapphire crystallization furnace (Kyropoulos blister method) compared with other crystal growth methods?
A: 1. No need to continuously pull the seed crystal: in the equal diameter growth stage, the crystal is crystallized by natural cooling, without relying on mechanical lifting, reducing mechanical disturbances and defects.

2. Suitable for large size crystals: it can grow 85-120 kg sapphire single crystal to meet industrial mass production needs, such as LED substrate and optical window applications.

3. High yield and low defect: Optimized thermal field design (such as segmented heaters and multi-layer heat shield), reduce dislocation density (<1000/cm²), and yield more than 75%.

4. Energy saving and automation: fully enclosed vacuum chamber and double-layer water cooling structure reduce energy loss, combined with PLC control system to achieve automated operation and reduce manual intervention.

2. Q: What is the essential difference between the working principle of the bubble method equipment and the traditional lifting method (such as Czochralski method)?
A: 1. Growth stage difference: lifting method: the whole process needs to mechanically lift the seed crystal, and crystal growth is achieved by controlling the lifting speed, which is easy to cause defects due to mechanical vibration. Bubble growth method: only in the necking stage to pull the seed crystal, the equal diameter stage depends on the temperature gradient natural growth, reduce stress and improve crystal uniformity.

2. Thermal field control: The bubble growth method adopts dual temperature zone independent heating (side heating body + bottom heating body), accurately regulates axial and radial temperature gradients, and prevents bubbles and cracks. The lifting rule relies on a single heating source, and the temperature gradient is fixed, which is difficult to adapt to the growth of large crystals.

3. Application scenario: The bubble method is more suitable for large size, high purity crystals (such as sapphire, calcium fluoride), while the Tila method is mostly used for silicon, germanium and other conventional semiconductor materials.

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